Comparison study of nucleation and growth characteristics of chemical-vapor-deposited diamond films on CoSi2 (001) and Si(001)
Comparison study of nucleation and growth characteristics of chemical-vapor-deposited diamond films on CoSi2 (001) and Si(001)
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DOI：
10.1063/1.372086
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发表时间：
2000-02-15
影响因子：
3.2
通讯作者：
Mantl, S
中科院分区：
文献类型：
--
作者：
Gu, CZ;Jiang, X;Mantl, S
为了实现金刚石的应用，在Si(001)衬底上用分子束异构法沉积了CoSi2(001)外延层作为衬底。比较了金刚石薄膜和Si(001)衬底上金刚石薄膜的成核和织构生长。结果表明，在微波等离子体腔中，采用偏压增强法可以在较低的温度下在CoSi2表面形成密度较高的金刚石。采用[001]织构生长条件，可以在CoSi2(001)衬底上生长出高质量的[001]织构金刚石薄膜。到目前为止，还没有观察到金刚石在CoSi2上的外延生长。统计上，在[001]织构的薄膜中，金刚石颗粒绕[001]轴的旋转角分布显示出相对于CoSi2[011]轴的13度、22度、45度和77度的面内取向。结构和化学分析表明，没有检测到Co和Si元素从CoSi2衬底扩散到金刚石膜中。在CoSi2衬底上生长的薄膜与直接在Si衬底上生长的外延薄膜具有相似的晶体质量。(C)2000年美国物理研究所。[S0021-8979(00)10203-8]。
Epitaxial CoSi2 (001) layers, deposited on Si(001) substrates by molecular beam allotaxy, were used as substrates for diamond deposition in order to realize applications. The nucleation and textured growth of diamond films were compared with those on the Si(001) substrates. The results indicate that in a microwave-plasma chamber diamond can be nucleated with a higher density on CoSi2 at lower temperatures using a bias-enhanced method. High-quality [001]-textured diamond films can be synthesized on CoSi2 (001) using the [001]-textured growth conditions. So far, epitaxial growth of diamond on CoSi2 cannot be observed. Statistically, a rotating angle distribution of diamond grains around the [001] axis in a [001]-textured film shows, however, preferred in-plane orientations of 13 degrees, 22 degrees, 45 degrees, and 77 degrees relative to the CoSi2 [011] axis. The structural and chemical analyses show that no Co and Si element diffusion from the CoSi2 substrate into the diamond film can be detected. The films grown on CoSi2 have similar crystal quality to that of epitaxial films deposited directly on Si. (C) 2000 American Institute of Physics. [S0021-8979(00)10203-8].