Initial growth stages of heavily boron‐doped HFCVD diamond for electrical probe application
Initial growth stages of heavily boron‐doped HFCVD diamond for electrical probe application
复制标题
DOI：
10.1002/pssa.201300041
复制
发表时间：
2013-10
期刊：
影响因子：
--
通讯作者：
D. K. Simon;M. Tsigkourakos;T. Hantschel;T. Conard;W. Vandervorst
中科院分区：
文献类型：
--
作者：
D. K. Simon;M. Tsigkourakos;T. Hantschel;T. Conard;W. Vandervorst
通过热丝化学气相沉积（HFCVD）沉积的硼掺杂金刚石的初始生长阶段对于扫描扩展电阻显微镜（SSRM）中使用的模具尖端的导电性至关重要，其中第一层生长层是尖端的活性层。因此，在本文中，我们通过在长丝渗碳过程的不同时刻中断纳米晶（NCD）和微晶金刚石（MCD）薄膜的HFCVD过程来研究生长的开始。这些初始阶段的表征是通过X射线光电子能谱（XPS）、扫描电子显微镜（SEM）和原子力显微镜（AFM）完成的。XPS显示，在渗碳后的第一个~ 20分钟，种子表面的C -结合转变为纯C - C，从而揭示了缓慢的生长开始。AFM测量显示，实际生长开始于~ 40分钟后。我们的研究表明，硼倾向于在生长开始时（~ 50分钟）形成B - O簇，这可能会影响我们尖端第一层的导电性。通过使用渗碳细丝，金刚石种子形成更早，更明显的晶体形状，这与较高的sp3/sp2比率有关。这对于用于电探测的模压金刚石尖端是有利的。
The initial growth stages of boron‐doped diamond, deposited by hot‐filament chemical vapour deposition (HFCVD), are crucial for the conductivity of moulded tips used in scanning spreading resistance microscopy (SSRM) where the first grown layer is the active layer of the tip. In this paper, we investigate therefore the beginning of the growth by interrupting the HFCVD process for nano‐crystalline (NCD) and microcrystalline diamond (MCD) films at various moments during the filament carburisation. The characterisation of these initial stages is done by X‐ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). A slow growth start after the first ∼20 min of carburisation is revealed by the change of C‐bindings at the seed surface towards pure CC indicated by XPS. AFM measurements show that the actual growth starts after ∼40 min. Our work shows that boron tends to form BO clusters at the beginning of the growth (∼50 min) which can affect the conductivity of the first layers of our tips. By using carburised filaments the diamond seeds form earlier more pronounced crystal shapes which are related to a higher sp3/sp2 ratio. This is advantageous for moulded diamond tips used in electrical probing.