Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
复制标题
基于硅纳米晶的窄沟道MOSFET存储器的特性
DOI：
10.1143/jjap.38.2453
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发表时间：
1998
影响因子：
1.5
通讯作者：
T. Hiramoto
中科院分区：
文献类型：
--
作者：
Yi Shi;K. Saito;H. Ishikuro;T. Hiramoto
金属氧化物半导体场效应晶体管（MOSFET）存储器器件具有在窄沟道上的基于硅的浮栅。电测量已在20-300 K的温度范围内进行各种通道尺寸的设备。得到了很大的阈值电压漂移，明显依赖于沟道宽度，而与沟道长度无关。实验发现，阈值电压漂移和电荷保持特性几乎与温度无关。此外，在具有最窄沟道的器件中观察到了单电子充/放电过程。
Metal-oxide-semiconductor field-effect transistor (MOSFET) memory devices with silicon-nanocrystal-based floating gates on a narrow channel have been fabricated. Electrical measurements have been performed in the temperature range of 20–300 K for devices of various channel dimensions. Large threshold voltage shifts are obtained, being obviously dependent on channel width, and independent of channel length. It is experimentally found that the threshold voltage shift and charge retention characteristics are almost independent of temperature. Furthermore, single electron charge/discharge processes are observed in the device with the narrowest channel.