Multilevel RTS in Proton Irradiated CMOS Image Sensors Manufactured in a Deep Submicron Technology
Multilevel RTS in Proton Irradiated CMOS Image Sensors Manufactured in a Deep Submicron Technology
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DOI：
10.1109/tns.2009.2014759
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发表时间：
2009-08-01
影响因子：
1.8
通讯作者：
Saint-Pe, O.
中科院分区：
文献类型：
--
作者：
Goiffon, V.;Hopkinson, G. R.;Saint-Pe, O.
提出了一种新的自动化方法，能够检测像素阵列中的多级随机电报信号（RTS），并提取其主要特征。所提出的方法被施加到几个质子辐照像素阵列制造使用0.18 μ m CMOS工艺专用于成像。尽管大的质子能量范围和大的通量范围内使用，类似的指数RTS振幅分布观察。一个独立的位移损伤剂量的平均最大振幅提取从这些分布和RTS缺陷的数量似乎规模以及总非电离能量损失。这些结论允许RTS振幅分布的预测。研究了外加电场对RTS振幅的影响，发现外加偏压与RTS振幅之间没有明显的关系。
A new automated method able to detect multilevel random telegraph signals (RTS) in pixel arrays and to extract their main characteristics is presented. The proposed method is applied to several proton irradiated pixel arrays manufactured using a 0.18 mu m CMOS process dedicated to imaging. Despite the large proton energy range and the large fluence range used, similar exponential RTS amplitude distributions are observed. A mean maximum amplitude independent of displacement damage dose is extracted from these distributions and the number of RTS defects appears to scale well with total nonionizing energy loss. These conclusions allow the prediction of RTS amplitude distributions. The effect of electric field on RTS amplitude is also studied and no significant relation between applied bias and RTS amplitude is observed.