Crystal plane dependent growth of aligned single-walled carbon nanotubes on sapphire
Crystal plane dependent growth of aligned single-walled carbon nanotubes on sapphire
复制标题
DOI:
10.1021/ja8024752
复制
发表时间:
2008-07-30
影响因子:
15
通讯作者:
Minami, Nobutsugu
中科院分区:
文献类型:
--
作者:
Ishigami, Naoki;Ago, Hiroki;Minami, Nobutsugu
On single-crystal substrates, such as sapphire (alpha-Al(2)O(3)) and quartz (SiO(2)), single-walled carbon nanotubes (SWNTs) align along specific crystallographic axes of the crystal, indicating that the SWNT growth is influenced by the crystal surface. Here, we show that not only the orientation, but also the diameter and chirality of SWNTs are affected by the crystal plane of the sapphire substrate. The aligned SWNTs grown on the A- and R-planes of sapphire have narrower diameter distributions than randomly oriented tubes produced on the C-plane sapphire and amorphous SiO(2). Photoluminescence measurements reveal a striking difference between the aligned SWNTs: near-zigzag tubes are observed on the A-plane and near-armchair tubes on the R-plane. This study shows the route for the diameter and chirality control of SWNTs by surface atomic arrangements of a single-crystal substrate.