GEAS AS A NOVEL ARSENIC DIMER SOURCE FOR N-TYPE DOPING OF GE GROWN BY MOLECULAR-BEAM EPITAXY
GEAS AS A NOVEL ARSENIC DIMER SOURCE FOR N-TYPE DOPING OF GE GROWN BY MOLECULAR-BEAM EPITAXY
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DOI：
10.1063/1.354483
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发表时间：
1993-09-15
影响因子：
3.2
通讯作者：
BABA, T
中科院分区：
文献类型：
--
作者：
KAWANAKA, M;IGUCHI, N;BABA, T
GeAs被成功地应用于分子束外延生长的Ge的有效n型掺杂作为一种新的砷二聚体源。从GeAs Knudsen电池发出的砷通量不是由砷四聚体组成，而是由砷二聚体组成。GeAs的电子浓度高达1.1X10（20）cm-1，比掺锑Ge的电子浓度高得多。在砷掺杂的Ge膜中的电子浓度依赖于GeAs电池的温度与2.5 eV的激活能，这与从GeAs产生的砷二聚体束流的一致。此外，它被发现，在砷掺杂的Ge层中的电子和砷浓度是相同的。这些结果表明，砷原子被纳入锗从砷二聚体束，并得到一个非常高的电激活的纳入砷原子。
GeAs is successfully applied as a new arsenic dimer source for efficient n-type doping of Ge grown by molecular beam epitaxy. The arsenic fluxes emanating from GeAs Knudsen cells are not composed of arsenic tetramers, but only of arsenic dimers. High electron concentrations of up to 1.1X10(20) cm-1 are achieved with GeAs, which is much larger than any ever obtained in antimony-doped Ge. The electron concentration in the arsenic-doped Ge films depends on the GeAs cell temperature with an activation energy of 2.5 eV, which coincides with that of the arsenic dimer beam flux generated from GeAs. Moreover, it is found that the electron and arsenic concentrations in the arsenic-doped Ge layer are identical. These results indicate that arsenic atoms are incorporated into Ge from the arsenic dimer beam, and that a very high electrical activation of the incorporated arsenic atoms is obtained.