Trap elimination and injection switching at organic field effect transistor by inserting an alkane (C44H90) layer
Trap elimination and injection switching at organic field effect transistor by inserting an alkane (C44H90) layer
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DOI：
10.1063/1.2431713
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发表时间：
2007-01
影响因子：
4
通讯作者：
S. Ogawa;Y. Kimura;M. Niwano;H. Ishii
中科院分区：
文献类型：
--
作者：
S. Ogawa;Y. Kimura;M. Niwano;H. Ishii
最近，有文献提出，有机场效应晶体管（OFET）中含羟基的电介质界面上的电子陷阱阻碍了其n型工作。作者用一种无羟基的绝缘材料，一种长链烷烃，即，四硼酸盐（TTC），C44 H90层涂覆在SiO2介电层上。位移电流的测量清楚地表明，电子陷阱的SiO2表面抑制TTC层。对于具有Al电极和SiO2介电层的并五苯FET，观察到p型操作，而通过在SiO2界面上插入TTC将操作模式切换到n型。通过简单的图案化TTC层以产生双极注入，作者制造了具有单一金属电极的双极并五苯FET。因此TTC是一种良好的OFFEX介质层表面改性材料。
Recently, it was proposed in the literature that the electron trap on a hydroxyl-containing dielectric interface of an organic field effect transistor (OFET) hinders its n type operation. The authors fabricated pentacene and fullerene OFETs with a hydroxyl-free insulating material, a long-chain alkane, i.e., tetratetracontate (TTC), C44H90 layer coated on the SiO2 dielectric layer. The displacement current measurements clearly demonstrated that the electron trap of the SiO2 surface is suppressed by the TTC layer. For a pentacene FET with an Al electrode and SiO2 dielectric layer, a p type operation was observed, while the operation mode was switched to the n type by the insertion of TTC on the SiO2 interface. By simple patterning of the TTC layer to produce a bipolar injection, the authors fabricated an ambipolar pentacene FET with a single kind of metal electrode. Thus TTC is a good material for the surface modification of a dielectric layer in OFETs.