Dislocation foimation in seeds for quasi-monocrystalline silicon for solar cells
Dislocation foimation in seeds for quasi-monocrystalline silicon for solar cells
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DOI：
10.1016/j.actamat.2013.12.010
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发表时间：
2014-04-01
期刊：
影响因子：
9.4
通讯作者：
Lohne, Otto
中科院分区：
文献类型：
--
作者：
Ervik, Torunn;Stokkan, Gaute;Lohne, Otto
对两个工业铸造的准单晶硅块的研究表明，籽晶之间的交叉点处存在高位错密度。这可能归因于三种不同的生成机制。首先，在晶种中观察到位错晶胞结构，这可能是由于晶种表面处理不良造成的。此外，位错簇在两个相邻种子之间的界面中的接触点周围形成。在接触点，两个单晶硅晶种发生塑性变形并烧结在一起。位错玫瑰花结是高温下压痕机制的结果。第三种机制作用于底部表面，位错簇也通过晶种和坩埚之间的接触点的压痕形成。由于晶种中形成的位错将持续到生长的铸锭中，因此抑制晶种中位错的形成至关重要。 (C) 2013 Acta Materialia Inc. 由 Elsevier Ltd 出版。保留所有权利。
An investigation of two industrially cast quasi-monocrystalline silicon blocks revealed a high dislocation density originating at intersections between the seed crystals. This may be ascribed to three different generation mechanisms. Firstly, a dislocation cell structure was observed in the seed crystals, probably as an effect of poor surface preparation of the seeds. Furthermore, clusters of dislocations form around contact points in the interface between two neighbouring seeds. At contact points, the two monocrystalline silicon seeds plastically deform and sinter together. Dislocation rosettes form as a result of an indentation mechanism at high temperatures. A third mechanism acts at the bottom surface, where dislocation clusters also form by indentation of contact points between the seed and the crucible. Since dislocations forming in the seeds will continue into the growing ingot, it is crucial to depress the dislocation formation in the seeds. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.