Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors
Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors
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DOI：
10.1063/1.1398332
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发表时间：
2001-08
影响因子：
4
通讯作者：
N. Shigekawa;K. Shiojima;T. Suemitsu
中科院分区：
文献类型：
--
作者：
N. Shigekawa;K. Shiojima;T. Suemitsu
报道了AlGaN/GaN高电子迁移率晶体管电致发光的光谱分析。EL光谱的形状与光致发光光谱的形状完全不同。当栅极偏压降低时，EL光谱峰值的波长变短。扫描栅偏压时，其强度呈钟形。这些特征表明，EL信号是由于沟道电子在漏极边缘的高场区的带内跃迁。
Spectral analysis of the electroluminesence (EL) of AlGaN/GaN high-electron-mobility transistors is reported. The shape of the EL spectra is completely different from the shape of the photoluminescence spectrum. The wavelength for the peak of the EL spectrum gets shorter when the gate–bias voltage is decreased. Its intensity shows a bell shape when the gate-bias voltage is swept. These features suggest that the EL signal is due to the intraband transition of the channel electrons in the high-field region at the drain edge.