Local Transport Properties and Magnetoresistive Effects of Ferromagnetic Tunneling Junctions.
Local Transport Properties and Magnetoresistive Effects of Ferromagnetic Tunneling Junctions.
复制标题
铁磁隧道结的局部输运特性和磁阻效应。
DOI：
10.3379/jmsjmag.24.611
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发表时间：
2000
影响因子：
--
通讯作者：
T. Miyazaki
中科院分区：
文献类型：
--
作者：
Y. Ando;H. Kameda;M. Hayashi;H. Kubota;T. Miyazaki
对Ta（50 A）/Fe_（20）Ni_（80）（50 A）/IrMn（150 A）/Co（50 A）/Al（dAlA）氧化物结的局部电学特性进行了测量。电子图像显示出具有大约几nm的横向尺寸的对比度，并且没有观察到与形貌的强相关性。通过对局部电流-电压特性的分析，发现电流图像的对比度反映了势垒高度的分布。这可能是由于缺少来自Al 2 O3组成的化学计量的氧。我们测量了具有较短氧化时间和较低Al厚度的结的电流图像。通过考虑势垒高度的高斯分布来计算电流密度的直方图。除了薄Al结外，它与实验结果吻合得很好，这可能是由于局部漏电流。隧道磁电阻（TMR）比被认为是由这个电流减少。
The local electrical properties were measured simultaneously with the topography for a Ta(50A)/Fe20Ni80(50A)/IrMn(150A)/Co(50A)/Al(dAlA)-oxide junction. The electrical image showed the contrast with a lateral size of around a few nm, and no strong correlation with the topography was observed. By analyzing the local current-voltage characteristics, we found that the contrast of the current image showed the distribution of the barrier height. This may be due to the lack of the oxygen from the stoichiometry of the Al2O3 composition. We measured the current images for junctions with shorter oxidation times and with lower Al thicknesses. The histogram of current densities was calculated by taking into consideration the Gaussian distribution of the barrier height. It fitted the experimental results well except for the junction with thin Al; this may be due to a local leakage current. The tunneling magnetoresistance (TMR) ratio was considered to be reduced by this current.