Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC
Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC
复制标题
蓝宝石和半绝缘 SiC 上 AlGaN/GaN 高电子迁移率晶体管漏极电流崩塌的比较研究
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
T. Jimbo
中科院分区：
文献类型：
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作者：
S. Arulkumaran;T. Egawa;H. Ishikawa;T. Jimbo
使用小频率 (120 Hz) 正弦波叠加直流 IDS-VDS 特性，研究了半绝缘 (SI)-SiC 和蓝宝石衬底上的 AlGaN/GaN 高电子迁移率晶体管 (HEMT) 在高漏极电压下的漏极电流崩溃。与蓝宝石衬底上的 HEMT 相比，SI-SiC 衬底上的 AlGaN/GaN HEMT 具有较低的漏极电流崩塌。在 SiC 基和蓝宝石基 HEMT 上分别观察到两个和三个热激活深陷阱。额外深陷阱 (ΔE=0.61 eV) 的存在可能与导致蓝宝石基 HEMT 中严重漏极电流崩溃的材料缺陷/位错有关。白光照明的 IDS-VDS 特性支持蓝宝石基 HEMT 中存在更多数量的深陷阱。
The drain-current collapse at high drain voltage has been studied in AlGaN/GaN high-electron-mobility transistors (HEMTs) on both semi-insulating (SI)–SiC and sapphire substrates using small frequency (120 Hz) sinusoidal wave superimposed dc IDS–VDS characteristics. Low drain-current collapses were observed in AlGaN/GaN HEMTs on SI–SiC substrate when compared with the HEMTs on sapphire substrates. Two and three thermally activated deep traps were observed on SiC-based and sapphire-based HEMTs, respectively. The existence of an additional deep trap (ΔE=0.61 eV) could be associated with the material defects/ dislocations responsible for the severe drain current collapse in sapphire-based HEMTs. The white-light illuminated IDS–VDS characteristics support the existence of more number of deep traps in the sapphire-based HEMTs.