Silicon-based multilayer gratings with a designable narrowband absorption in the short-wave infrared.
Silicon-based multilayer gratings with a designable narrowband absorption in the short-wave infrared.
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DOI：
10.1364/oe.24.025103
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发表时间：
2016-10
期刊：
影响因子：
3.8
通讯作者：
Xiaoyi Liu;Jin-song Gao;Hai-gui Yang;Xiaoyi Wang;Jing-li Zhao
中科院分区：
文献类型：
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作者：
Xiaoyi Liu;Jin-song Gao;Hai-gui Yang;Xiaoyi Wang;Jing-li Zhao
我们展示了一种覆盖在硅衬底上的Al/Si多层栅微结构。这种微结构在短波红外波段(2.0μm-2.3μm)具有可设计的窄带吸收。我们通过模拟和模拟研究了它的吸收机理，并用金属-绝缘体-金属和法布里-珀罗腔理论很好地解释了结果。此外，我们还通过实验给出了制作的多层光栅微结构的吸收特性，并详细讨论了结构的横向角度对其吸收的影响。这项工作为设计工作频带可调的硅基器件提供了可能。
We demonstrate an Al/Si multilayer-grating microstructure covered on Si substrate. This microstructure presents a designable narrowband absorption in short-wave infrared (SWIR) waveband (2.0 μm-2.3 μm). We investigate its absorption mechanism by both modeling and simulations, and explain the results well with metal-insulator-metal and Fabry-Perot cavity theory. Furthermore, we present the absorption of fabricated multilayer-grating microstructure through experiment, and discuss the influence of structure's lateral angle on its absorption in detail. This work provides the possibility to design Si-based devices with designable working bands in SWIR spectrum.