Single-photon generation with InAs quantum dots
Single-photon generation with InAs quantum dots
复制标题
DOI:
10.1088/1367-2630/6/1/089
复制
发表时间:
2004-07-29
影响因子:
3.3
通讯作者:
Yamamoto, Y
中科院分区:
文献类型:
--
作者:
Santori, C;Fattal, D;Yamamoto, Y
Single-photon generation using InAs quantum dots in pillar microcavities is described. The effects on performance of the excitation wavelength and polarization, and the collection bandwidth and polarization, are studied in detail. The efficiency and photon state purity of these devices have been measured, and issues affecting these parameters are discussed. Prospects for improved devices are also discussed.