High-Voltage CMOS Active Pixel Sensor
High-Voltage CMOS Active Pixel Sensor
复制标题
高压 CMOS 有源像素传感器
DOI：
--
复制
发表时间：
2021
影响因子：
5.4
通讯作者：
Hui Zhang
中科院分区：
文献类型：
--
作者：
I. Perić;A. Andreazza;H. Augustin;M. Barbero;M. Benoit;R. Casanova;F. Ehrler;G. Iacobucci;R. Leys;A. M. González;P. Pangaud;M. Prathapan;R. Schimassek;A. Schöning;E. Figueras;A. Weber;M. Weber;W. Wong;Hui Zhang
高压CMOS（HVCMOS）传感器是一种新型的CMOS有源像素传感器，用于电离粒子，可以在具有深n阱选项的CMOS工艺中实现。该像素包含一个传感器电极，该传感器电极形成有植入在p型衬底中的深n阱。嵌入浅威尔斯中的CMOS像素电子器件被放置在深n阱内。通过用高负电压偏置衬底并通过使用低掺杂衬底， 可以实现ext{m}$。由粒子产生的电子通过漂移收集，这引起快速可检测的信号。该出版物提出了一个4.2平方厘米的大HVCMOS像素传感器，在商业180纳米工艺低掺杂衬底上实现及其表征。
The high-voltage CMOS (HVCMOS) sensors are a novel type of CMOS active pixel sensors for ionizing particles that can be implemented in CMOS processes with deep n-well option. The pixel contains one sensor electrode formed with a deep n-well implanted in a p-type substrate. CMOS pixel electronics, embedded in shallow wells, are placed inside the deep n-well. By biasing the substrate with a high negative voltage and by the use of a lowly doped substrate, a depleted region depth of at least 30 $mu ext{m}$ can be achieved. The electrons generated by a particle are collected by drift, which induces fast detectable signals. This publication presents a 4.2-cm2 large HVCMOS pixel sensor implemented in a commercial 180-nm process on a lowly doped substrate and its characterization.