Enhanced photoluminescence from porous silicon nanowire arrays.
Enhanced photoluminescence from porous silicon nanowire arrays.
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多孔硅纳米线阵列的增强光致发光
DOI：
10.1186/1556-276x-8-277
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发表时间：
2013-06-09
影响因子：
--
通讯作者：
Wang Q
中科院分区：
文献类型：
--
作者：
Zhang C;Li C;Liu Z;Zheng J;Xue C;Zuo Y;Cheng B;Wang Q
研究了多孔硅纳米线阵列的室温光致发光增强及其机理。通过调整纳米结构和表面修饰，光强提高了4个数量级以上。结果表明，纳米孔结构中与Si-O键相关的局域态和自困激发是由强光发射引起的。
The enhanced room-temperature photoluminescence of porous Si nanowire arrays and its mechanism are investigated. Over 4 orders of magnitude enhancement of light intensity is observed by tuning their nanostructures and surface modification. It is concluded that the localized states related to Si-O bonds and self-trapped excitations in the nanoporous structures are attributed to the strong light emission.