Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)MgO Thin Films
Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)MgO Thin Films
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单晶 Ni(111)MgO 薄膜上单向排列六方氮化硼畴的控制生长
DOI：
10.1021/acs.cgd.8b01542
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发表时间：
2019
影响因子：
3.8
通讯作者：
Wang Ruzhi
中科院分区：
文献类型：
--
作者：
Meng Junhua;Ming Bangming;Zhang Xingwang;Gao Menglei;Cheng Likun;Yin Zhigang;Wang Denggui;Li Xingxing;You Jingbi;Wang Ruzhi
二维(2D)六方氮化硼(h-BN)被认为是其他2D异质结电子器件的理想介质层或衬底。然而，已报道的2Dh-BN薄膜大多由小尺寸和随机取向的h-BN结构域组成，导致在合并过程中形成高密度的晶界。本文报道了用离子束溅射方法在(111)衬底上的Ni(111)外延薄膜上大面积生长出单向排列的h-BN磁区。研究发现，衬底Ni薄膜的面内取向对h-BN磁畴的取向起着关键作用，这种取向可以通过沉积温度来控制。此外，还用密度泛函理论计算确定了在Ni(111)面上三角形h-BN磁畴的有利构型。这项工作为大面积制备单向排列的h-BN结构域提供了一种很有前途的方法，从而有可能通过缝合这些h-BN结构域来获得晶片尺寸的单晶h-BN。
Two-dimensional (2D) hexagonal boron nitride (h-BN) is considered as an ideal dielectric layer or substrate for other 2D heterostructure electronic devices. However, reported 2D h-BN films consist mostly of small sized and randomly oriented h-BN domains, resulting in a high density of grain boundaries during coalescence. Here, we report the growth of unidirectionally aligned h-BN domains in a large area on the Ni(111) epitaxial thin film on MgO(111) substrate by ion beam sputtering deposition. It is found that the in-plane orientation of the underlying Ni thin film, which can be controlled by its deposition temperature, plays a key role in the h-BN domain alignment. Furthermore, density functional theory calculations are performed to determine the favorable configuration of the triangular shaped h-BN domains on Ni(111). This work provides a promising approach to prepare unidirectionally aligned h-BN domains in a large area, and thus it is possible to achieve wafer-scale single crystal h-BN by stitching these h-BN domains.