Large area and broadband ultra-black absorber using microstructured aluminum doped silicon films.
Large area and broadband ultra-black absorber using microstructured aluminum doped silicon films.
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使用微结构铝掺杂硅薄膜的大面积宽带超黑吸收器
DOI：
10.1038/srep42750
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发表时间：
2017-02-16
影响因子：
4.6
通讯作者：
Gao J
中科院分区：
文献类型：
--
作者：
Liu Z;Liu H;Wang X;Yang H;Gao J
提出了一种基于微结构铝掺杂硅薄膜的大面积宽带超黑吸收体。在350 ~ 2000 nm的宽范围内，吸收体的平均吸收率大于99%，尺寸可达6英寸。我们研究了吸收体的制备机制，发现Al原子掺杂在硅中改善了薄膜表面纳米锥状微结构的形成，导致入射光的反射显著降低。通过实验和模拟计算，对吸收机理进行了深入探讨。结果表明，Al原子的掺杂和微结构中形成的Mie共振是产生宽带超高吸收的主要原因。
A large area and broadband ultra-black absorber based on microstructured aluminum (Al) doped silicon (Si) films prepared by a low-cost but very effective approach is presented. The average absorption of the absorber is greater than 99% within the wide range from 350 nm to 2000 nm, and its size reaches to 6 inches. We investigate the fabrication mechanism of the absorber and find that the Al atom doped in silicon improves the formation of the nanocone-like microstructures on the film surface, resulting in a significant decrease in the reflection of incident light. The absorption mechanism is further discussed by experiments and simulated calculations in detail. The results show that the doped Al atoms and Mie resonance formed in the microstructures contribute the broadband super-high absorption.