A model for switching in ferroelectric thin films by nucleation-growth of domains with three-dimensional polarization
A model for switching in ferroelectric thin films by nucleation-growth of domains with three-dimensional polarization
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通过三维极化域的成核生长实现铁电薄膜切换的模型
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
M. Okuyama
中科院分区：
文献类型：
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作者：
D. Ricinschi;Y. Ishibashi;M. Iwata;L. Mitoseriu;M. Okuyama
在本文中，我们使用离散朗道型三维极化热力学势研究了转换动力学，并受到附着在基底上的薄膜的弹性约束。我们已经证明，180/sup 0/ 域反转和偏振矢量旋转是可能的切换机制，具体取决于场强和弹性应力。面内偏振分量对切换的作用已被研究并证明支持实验结果。
In this paper we studied the switching kinetics using a discrete Landau-type three-dimensional polarization thermodynamic potential, with the elastic constraints of a film attached to a substrate. We have shown that 180/sup 0/ domain reversal and polarization vector rotations are possible switching mechanisms, depending on field strength and elastic stresses. The role of in-plane polarization components to switching has been investigated and shown to support experimental findings.