InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters.
InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters.
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DOI：
10.1038/srep19271
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发表时间：
2016-01-13
影响因子：
4.6
通讯作者：
Tansu N
中科院分区：
文献类型：
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作者：
Tan CK;Borovac D;Sun W;Tansu N
与传统的In 0.2Ga 0.8N量子阱相比，InGaN/dilute-As GaNAs界面量子阱（QW）的设计导致跃迁波长显著红移，电子-空穴波函数重叠和自发辐射率得到改善。采用自洽六带k·p能带理论，由30 μ In0.2Ga0.8N和10 μ GaN0.95As0.05界面量子阱组成的氮化物有源区在红光区产生623.52nm的发射波长.利用30 μ In0.2Ga0.8N/10 μ GaN0.95As0.05界面量子阱也导致自发辐射率的8.5倍的增强归因于电子-空穴波函数重叠的改善，与传统的30 μ In0.35Ga0.65N量子阱相比，对于红色光谱区域。此外，界面QW的跃迁波长相对不受稀As GaNAs界面层的厚度（超过10 μ m）的影响。分析表明，使用界面量子阱的概念在氮化物基发光二极管的长波长发射的潜力。
The design of InGaN/dilute-As GaNAs interface quantum well (QW) leads to significant redshift in the transition wavelength with improvement in electron-hole wave function overlap and spontaneous emission rate as compared to that of the conventional In0.2Ga0.8N QW. By using self-consistent six-band k·p band formalism, the nitride active region consisting of 30 Å In0.2Ga0.8N and 10 Å GaN0.95As0.05 interface QW leads to 623.52 nm emission wavelength in the red spectral regime. The utilization of 30 Å In0.2Ga0.8N/10 Å GaN0.95As0.05 interface QW also leads to 8.5 times enhancement of spontaneous emission rate attributed by the improvement in electron-hole wavefunction overlap, as compared to that of conventional 30 Å In0.35Ga0.65N QW for red spectral regime. In addition, the transition wavelength of the interface QW is relatively unaffected by the thickness of the dilute-As GaNAs interface layer (beyond 10 Å). The analysis indicates the potential of using interface QW concept in nitride-based light-emitting diodes for long wavelength emission.