Growth and scintillation properties of Ce doped Gd2Si2O7/SiO2 eutectics
Growth and scintillation properties of Ce doped Gd2Si2O7/SiO2 eutectics
复制标题
Ce掺杂Gd2Si2O7/SiO2共晶的生长和闪烁性能
DOI：
10.1088/1742-6596/619/1/012036
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
A. Yoshikawa
中科院分区：
文献类型：
--
作者：
K. Kamada;S. Kurosawa;R. Murakami;Y. Yokota;J. Pejchal;Y. Ohashi;A. Yoshikawa
采用μ-PD法生长了Ce：Gd_2Si_2O_7/SiO_2共晶。得到边长为5 mm、长度为15 mm的正方形样品。观察到正交晶系的Gd_2Si_2O_7和SiO_2两相。棒相为SiO2，基体相为Gd 2Si 2 O 7。在400 nm处观察到Ce ~（3+）的4f ~（5d）发射。样品显示出约16，000光子/MeV的光产额。闪烁衰减时间为46.3ns（21%）~ 249 ns（79%）。
Ce:Gd2Si2O7/SiO2 eutectic was grown by the μ-PD method. The square-shape sample with a side of 5 mm and a length of 15 mm was obtained. Two phases of orthorhombic Gd2Si2O7 and SiO2 was observed. Rod-phase was SiO2 and matrix phase was Gd2Si2O7. Ce3+ 4f5d emission have been observed at 400nm. The sample showed light yield of around 16,000 photons/MeV. Scintillation decay time was 46.3ns(21%) 249ns(79%).
影响因子：
1.8
作者：
Blahuta, S.;Bessiere, A.;Ouspenski, V.
通讯作者：
Ouspenski, V.