Evaluation of carbon incorporation and strain of doped MgB2 superconductor by Raman spectroscopy
Evaluation of carbon incorporation and strain of doped MgB2 superconductor by Raman spectroscopy
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DOI：
10.1016/j.scriptamat.2010.10.025
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发表时间：
2011-02
影响因子：
6
通讯作者：
W. Yeoh;R. Zheng;S. Ringer;Wenxian Li;Xun Xu;S. Dou;S. Chen;J. MacManus‐Driscoll
中科院分区：
文献类型：
--
作者：
W. Yeoh;R. Zheng;S. Ringer;Wenxian Li;Xun Xu;S. Dou;S. Chen;J. MacManus‐Driscoll
采用拉曼光谱研究了SiC掺杂MgB2体材料的应变和碳置换水平。拉曼光谱被证明是一个更好的方法来区分个别的影响应变和碳比标准的X射线衍射。结果表明，晶格参数相关法测定高应变试样中碳含量是无效的。我们的结果也提供了一个替代的解释晶格变化在非碳掺杂的MgB2，这基本上是由于晶格应变。
Raman spectroscopy is employed to study both the strain and the carbon substitution level in SiC-doped MgB2bulk samples. Raman spectroscopy was demonstrated to be a better method to distinguish the individual influences of strain and carbon than standard X-ray diffraction. It is found that the lattice parameter correlation method for C content determination is invalid for highly strained samples. Our result also provides an alternative explanation for lattice variation in non-carbon-doped MgB2, which is basically due to lattice strain.