Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells
Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells
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用于硅太阳能电池的三氧化铬空穴选择性异质接触
DOI：
10.1021/acsami.8b02878
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发表时间：
2018-04-25
影响因子：
9.5
通讯作者：
Shen, Hui
中科院分区：
文献类型：
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作者：
Lin, Wenjie;Wu, Weiliang;Shen, Hui
工业 p 型硅太阳能电池具有高复合率和铝 (Al) 背表面场的高热预算。然而，由于费米能级钉扎效应，轻掺杂 p 型硅上的直接金属化对空穴表现出较大的肖特基势垒。在这项贡献中，具有高稳定性和高性能的低温沉积的无掺杂三氧化铬（CrOx，x\lt3）首次应用于p型硅太阳能电池作为背面的空穴选择性接触。在 p 型硅太阳能电池上采用 CrOx/Ag/CrOx 的先进空穴选择性接触，可实现 20.3% 的功率转换效率。
A high recombination rate and high thermal budget for aluminum (Al) back surface field are found on the industrial p-type silicon solar cells. Direct metallization on lightly doped p-type silicon, however, exhibits a large Schottky barrier for the hole because of Fermi-level pinning effect. In this contribution, low temperature deposited, dopant-free chromium trioxide (CrOx, x\lt3) with high stability and high performance, is first applied in a p-type silicon solar cell as a hole-selective contact at the rear surface. Implementing the advanced holeselective contacts with CrOx/Ag/CrOx on the p-type silicon solar cell results in a power conversion efficiency of 20.3%.