Electroluminescence from n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers
Electroluminescence from n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers
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DOI：
10.1088/0022-3727/45/48/485103
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发表时间：
2012-12
期刊：
影响因子：
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通讯作者：
Lichun Zhang;Qing-shan Li;L. Shang;Zhongjun Zhang;Ruizhi Huang;Fengzhou Zhao
中科院分区：
文献类型：
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作者：
Lichun Zhang;Qing-shan Li;L. Shang;Zhongjun Zhang;Ruizhi Huang;Fengzhou Zhao
采用脉冲激光沉积法制备了具有不同界面层的n-ZnO：Ga/p-GaN异质结发光二极管。所有的设备都表现出非线性整流行为。由于Ga_2O_3界面层的形成，n-ZnO：Ga/p-GaN具有较强的382 nm紫外和423 nm蓝光发射。与n-ZnO相比：Ga/MgO/p-GaN发光二极管中，具有Ga 2 O3界面层的n-ZnO：Ga/p-GaN的开启电压下降到7.6V，紫外发射强度增强。利用异质结能带图讨论了界面层对电致发光的影响。
n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers are fabricated by pulsed laser deposition. All the devices demonstrate nonlinear rectifying behaviour. Due to the formation of Ga2O3 interfacial layers, n-ZnO : Ga/p-GaN exhibits strong ultraviolet emission centred at 382 nm and blue emission centred at 423 nm. Compared with a n-ZnO : Ga/MgO/p-GaN light-emitting diode, the turn-on voltage of n-ZnO : Ga/p-GaN with a Ga2O3 interfacial layer drops down to 7.6 V and the ultraviolet emission intensity is enhanced. Detailed electroluminescence mechanisms influenced by the interfacial layer are discussed using the band diagram of heterojunctions.