Graphdiyne-modified cross-linkable fullerene as an efficient electron-transporting layer in organometal halide perovskite solar cells

Graphdiyne-modified cross-linkable fullerene as an efficient electron-transporting layer in organometal halide perovskite solar cells
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DOI:
10.1016/j.nanoen.2017.11.008
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发表时间:
2018
期刊:
影响因子:
17.6
通讯作者:
M. Li;Zhaokui Wang;Tin Kang;Yingguo Yang;Xingyu Gao;Chain‐Shu Hsu;Yuliang Li;L. Liao
M. Li;Zhaokui Wang;Tin Kang;Yingguo Yang;Xingyu Gao;Chain‐Shu Hsu;Yuliang Li;L. Liao
中科院分区:
材料科学1区
文献类型:
--
作者:
M. Li;Zhaokui Wang;Tin Kang;Yingguo Yang;Xingyu Gao;Chain‐Shu Hsu;Yuliang Li;L. Liao

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良好的接触、增强的传输能力和匹配的能级的界面工程对于开发高性能的平面钙钛矿太阳能电池是不可或缺的和关键的。在这里,我们报道了一种优秀的电子传输层(ETL),它可以同时提高n-i-p平面PSCs的稳定性和效率。在可交联型富勒烯[6,6]-苯基-C61-丁基苯基苯乙烯树枝状酯中引入大分子π-共轭石墨二烯(GD)以改善膜的取向。拉曼光谱和2D掠入射X射线衍射仪测试表明,π-π堆积作用很强,形成了面对面堆积的复合膜。取向的C-PCBSD:Gd薄膜有利于后续钙钛矿型薄膜的生长和结晶,并具有电子迁移率高、电荷提取效率高和能级可剪裁等优点。此外,热退火的C-PCBSD:Gd薄膜提供了具有足够耐溶剂性的粘附膜网络。因此,钙钛矿型器件的功率转换效率达到了20.19%,电池稳定性也得到了明显改善。这表明Gd修饰的可交联富勒烯作为ETL在n-i-p结构PSCs中具有潜在的应用前景。这一发现为利用具有大π共轭的2D材料沉积有序取向的富勒烯薄膜,从而控制后续的钙钛矿结晶开辟了一条新的途径。
Interface engineering resulting in good contact, enhanced transport capability, and matched energy levels is indispensable and critical for the development of high-performance planar perovskite solar cells (PSCs). Here, we report an excellent electron-transporting layer (ETL) that can simultaneously enhance the stability and efficiency of n-i-p planar PSCs. Large π-conjugated graphdiyne (GD) was introduced into cross-linkable fullerene [6,6]-phenyl-C61-butyric styryl dendron ester (PCBSD) to improve the film orientation. Raman spectroscopy and 2D grazing incidence X-ray diffraction (GIXRD) measurements revealed that a strong π–π stacking interaction occurred between GD and cross-linkable PCBSD (C-PCBSD), generating a face-on stacked composite film. The orientated C-PCBSD:GD films was favorable for the growth and crystallization of the subsequent perovskite films and provided the merits of superior electron mobility, efficient charge extraction and energy-level tailoring. In addition, the thermally annealed C-PCBSD:GD film provided an adhesive film network with sufficient solvent resistance. Consequently, the perovskite devices delivered a power conversion efficiency of 20.19% with obviously improved cell stability. This indicates a potential application of GD-modified cross-linkable fullerene as an ETL in n-i-p structure PSCs. The finding opens a new route to deposit the fullerene films with ordered orientation by 2D materials with large π-conjugation, and thus to control the subsequent perovskite crystallization.