Valence transition in topological Kondo insulator
Valence transition in topological Kondo insulator
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拓扑近藤绝缘体中的价态跃迁
DOI:
10.1088/1361-648x/ab4625
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发表时间:
2019-08
期刊:
影响因子:
--
通讯作者:
Song Hai-Feng
中科院分区:
文献类型:
--
作者:
Zhuang Jia-Tao;Zheng Xiao-Jun;Wang Zhi-Yong;Ming Xing;Li Huan;Liu Yu;Song Hai-Feng
We investigate the valence transition in three-dimensional topological Kondo insulator through slave-boson analysis of periodic Anderson model. By including the effect of intra-atomic Coulomb correlation between conduction and local electrons, we find a first-order valence transition from Kondo region to mixed valence state upon ascending of local f- level above a critical , and this valence transition usually occurs very close to or simultaneously with a topological transition. Near the parameter region of zero-temperature valence transition, rise of temperature can generate a thermal valence transition from mixed valence to Kondo region, accompanied by a first-order topological transition. Remarkably, above a critical which is considerably smaller than that generating paramagnetic valence transition, the original continuous antiferromagnetic transition is shifted to first order one, at which a discontinuous valence shift takes place. Upon increasing , the paramagnetic valence transition approaches then converges with the first-order antiferromagnetic transition, leaving a significant valence shift on the magnetic boundary. The continuous antiferromagnetic transition, first-order antiferromagnetic transition, paramagnetic valence transition and topological transitions are all summarized in a global phase diagram. Our proposed exotic transition processes can help to understand the thermal valence variation as well as the valence shift around the pressure-induced magnetic transition in topological Kondo insulator candidates and in other heavy-fermion systems.
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影响因子:
8.6
作者:
S. Watanabe;A. Tsuruta;K. Miyake;J. Flouquet
通讯作者:
S. Watanabe;A. Tsuruta;K. Miyake;J. Flouquet
影响因子:
1.7
作者:
S. Watanabe;A. Tsuruta;K. Miyake;J. Flouquet
通讯作者:
S. Watanabe;A. Tsuruta;K. Miyake;J. Flouquet
影响因子:
3.5
作者:
Li Huan;Wang Zhi-Yong;Zheng Xiao-Jun;Liu Yu;Zhong Yin
通讯作者:
Zhong Yin
DOI:
10.1088/0953-8984/18/6/021
发表时间:
2005-11
期刊:
Journal of Physics: Condensed Matter
影响因子:
--
作者:
J. Derr;G. Knebel;G. Lapertot;B. Salce;M. Measson;J. Flouquet
通讯作者:
J. Derr;G. Knebel;G. Lapertot;B. Salce;M. Measson;J. Flouquet
影响因子:
8.6
作者:
KOTLIAR, G;RUCKENSTEIN, AE
通讯作者:
RUCKENSTEIN, AE