Energy level tunneling spectroscopy and single electron charging in individual CdSe quantum dots
Energy level tunneling spectroscopy and single electron charging in individual CdSe quantum dots
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DOI：
10.1063/1.124808
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发表时间：
1999-09-20
影响因子：
4
通讯作者：
Millo, O
中科院分区：
文献类型：
--
作者：
Alperson, B;Rubinstein, I;Millo, O
我们直接显示的电子结构的演化的半导体量子点（QD）的量子点尺寸在强限制制度，采用低温隧穿电流-电压谱个别电沉积的CdSe量子点。从光谱中，我们测量的E-g的值，映射离散的能级在两个价和导“带”，并显示发生单电子隧穿效应的隔离量子点的不同大小（2，3，和4.5 nm直径）。由于隧穿不受光学选择规则的限制，我们能够直接测量不一定能通过光谱学获得的能级间距。我们的光谱证明了充电和能级间距之间的相互作用，从而产生了丰富的和可控的结构，形成了量子点纳米电子器件的基础。(C)1999年美国物理学会。[S0003-6951（99）02138-5]。
We directly show the evolution of the electronic structure of semiconductor quantum dots (QDs) with QD size in the strong confinement regime by employing low-temperature tunneling current-voltage spectroscopy to individual electrodeposited CdSe QDs. From the spectra we measure the values of E-g, map discrete energy levels in both valence and conduction "bands," and show the occurrence of single-electron tunneling effects for isolated QDs of different sizes (2, 3, and 4.5 nm diameter). Since tunneling is not limited by optical selection rules, we are able to directly measure energy level spacings not necessarily accessible by optical spectroscopy. Our spectra demonstrate the interplay between charging and energy level spacing, resulting in a rich and controllable structure that forms a basis for QD nanoelectronic devices. (C) 1999 American Institute of Physics. [S0003-6951(99)02138-5].