Braiding Lateral Morphotropic Grain Boundaries in Homogenetic Oxides
Braiding Lateral Morphotropic Grain Boundaries in Homogenetic Oxides
复制标题
同质氧化物中编织横向同形晶界
DOI：
10.1002/adma.202206961
复制
发表时间：
2022-11-21
影响因子：
29.4
通讯作者：
Guo, Er-Jia
中科院分区：
文献类型：
--
作者：
Chen, Shengru;Zhang, Qinghua;Guo, Er-Jia
由相关氧化物形成的界面为发现涌现现象和量子态提供了重要途径。然而，通过传统的逐层堆叠或自组装来制造具有可变晶体取向和应变状态的氧化物界面是极具挑战性的。本文报道了在横向相互连接的钴酸盐同质结构中形成的嗜形晶界（GBs）。单晶衬底和悬浮超薄独立膜为相干外延提供了独立的模板，并限制了生长方向，从而产生了无缝和原子锋利的gb。混合结构中的电子态和磁性行为被gb横向调制和隔离，从而在平面矩阵中实现人工工程功能。这项工作为通过控制合成路线制造前所未有的创新界面提供了一种简单且可扩展的方法，并为探索神经形态、固态电池和催化方面的潜在应用提供了一个平台。
Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenging by conventional layer-by-layer stacking or self-assembling. Here, the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures is reported. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. This work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as providing a platform for exploring potential applications in neuromorphics, solid-state batteries, and catalysis.