Doping of III-nitride materials
Doping of III-nitride materials
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DOI：
10.1016/j.mssp.2016.11.006
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发表时间：
2017-05-01
影响因子：
4.1
通讯作者：
Parbrook, Peter J.
中科院分区：
文献类型：
--
作者：
Pampili, Pietro;Parbrook, Peter J.
在这篇综述论文中，我们将报告目前的研究状况，关于掺杂的III族氮化物材料及其合金。GaN是一种成熟的材料，对n型和p型掺杂都有相对较好的理解，虽然n-GaN很容易实现，但p型掺杂需要更多的关注。有显着的努力，以扩大组成范围，可以可控地掺杂的AlGaInN合金。这将允许应用于更短和更长波长的光电子器件以及扩展的电力电子器件。发现具有低镓含量的AlGaN和InGaN合金的掺杂具有特别的挑战，特别是对于p材料，并且描述了这些问题。
In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as extending power electronic devices. It is found that doping of AlGaN and InGaN alloys with low-gallium-content has particular challenges, especially for p-materials and these issues are described.