Near-optimal single-photon sources in the solid state
Near-optimal single-photon sources in the solid state
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DOI：
10.1038/nphoton.2016.23
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发表时间：
2016-05-01
期刊：
影响因子：
35
通讯作者：
Senellart, P.
中科院分区：
文献类型：
--
作者：
Somaschi, N.;Giesz, V.;Senellart, P.
光量子技术的规模化需要高效的、按需的高度不可区分的单光子源。嵌入光子结构的半导体量子点是一种超亮单光子源，但其不可分辨性受到电荷噪声的限制。参量下转换源提供高度不可区分的光子，但是在非常低的亮度下操作以保持高的单光子纯度。到目前为止，还没有技术能够提供一个产生近乎统一的不可逆性和纯单光子的明亮光源。在这里，我们报告这样的设备在电控腔中的量子点。确定性制造的结构上的电偏压的应用示出强烈地降低电荷噪声。在共振激发下，不可逆性为0.9956 +/- 0.0045，g（（2））（0）= 0.0028 +/- 0.0012。65%的光子提取和0.154 +/- 0.015的测量亮度使该光源比任何同等质量的光源亮20倍。这种新一代光源为光量子技术的复杂性和可扩展性开辟了新的道路。
The scaling of optical quantum technologies requires efficient, on-demand sources of highly indistinguishable single photons. Semiconductor quantum dots inserted into photonic structures are ultrabright single-photon sources, yet the indistinguishability is limited by charge noise. Parametric downconversion sources provide highly indistinguishable photons but are operated at very low brightness to maintain high single-photon purity. To date, no technology has provided a bright source generating near-unity indistinguishability and pure single photons. Here, we report such devices made of quantum dots in electrically controlled cavities. Application of an electrical bias on the deterministically fabricated structures is shown to strongly reduce charge noise. Under resonant excitation, an indistinguishability of 0.9956 +/- 0.0045 is demonstrated with g((2))(0) = 0.0028 +/- 0.0012. The photon extraction of 65% and measured brightness of 0.154 +/- 0.015 make this source 20 times brighter than any source of equal quality. This new generation of sources opens the way to new levels of complexity and scalability in optical quantum technologies.