Nonpolar resistive switching in Mn-doped BiFeO3 thin films by chemical solution deposition
Nonpolar resistive switching in Mn-doped BiFeO3 thin films by chemical solution deposition
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通过化学溶液沉积实现锰掺杂 BiFeO3 薄膜的非极性电阻开关
DOI：
10.1063/1.4742897
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发表时间：
2012-08-06
影响因子：
4
通讯作者：
Wang, B.
中科院分区：
文献类型：
--
作者：
Luo, J. M.;Lin, S. P.;Wang, B.
通过化学溶液沉积在 Pt/Ti/SiO2/Si 基底上制备纳米级 Mn 掺杂 BiFeO3 (BFMO) 薄膜。在 Pt/BFMO/Pt 结构中观察到非极性非易失性电阻切换。电流-电压关系的分析表明，局域陷阱控制的空间电荷限制电流传导对于电阻切换非常重要。 X射线光电子能谱结果表明，Fe2+和Fe3+的共存可归因于相对的氧空位。根据缺陷化学，由氧空位的中和/电离决定的 Fe2+ 和 Fe3+ 之间的价态变化被认为在导电丝相关的非极性电阻切换中起着至关重要的作用。 (C) 2012 年美国物理研究所。 [http://dx.doi.org/10.1063/1.4742897]
Nanoscale Mn-doped BiFeO3 (BFMO) films are prepared by chemical solution deposition on Pt/Ti/SiO2/Si substrates. Nonpolar nonvolatile resistive switching has been observed in Pt/BFMO/Pt structure. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized traps should be of great importance to the resistance switching. X-ray photoelectron spectroscopy results suggest that the coexistence of Fe2+ and Fe3+ can be ascribed to the relatively oxygen vacancies. According to defect chemistry, the valence variation between Fe2+ and Fe3+ determined by the neutralization/ionization of oxygen vacancies is supposed to play a crucial role in conductive filament-related nonpolar resistive switching. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742897]