Near-infrared absorption enhancement in microstructured silicon by Ag film deposition
Near-infrared absorption enhancement in microstructured silicon by Ag film deposition
复制标题
通过银膜沉积增强微结构硅的近红外吸收
DOI：
10.1007/s10854-016-4932-4
复制
发表时间：
2016-09-01
影响因子：
2.8
通讯作者：
Wang, Xiaoyi
中科院分区：
文献类型：
--
作者：
Wang, Yanchao;Gao, Jinsong;Wang, Xiaoyi
研究了不同尺寸的飞秒激光扫描在硅表面形成的尖峰状微结构对其1200~2500 nm近红外吸收的影响。虽然小尺寸微结构的红外吸收明显低于大尺寸微结构，但在后续沉积的银薄膜中加入大量随机的、不规则的纳米银颗粒可以进一步提高红外吸收到90%。详细讨论了吸收增强的原因，并从理论上进行了分析。
We investigate the influence of spike-like microstructures formed on the silicon surface via fs-laser scanning with different-size on its near-infrared absorption from 1200 to 2500 nm. Although the infrared absorption of the small size microstructures is obviously lower than the large size, it can be further improved to 90 % by a large amount of random and irregular Ag nano particles from a subsequent deposition of Ag thin film. The origins of absorption enhancement are discussed and theoretically analyzed in detail.