A novel sacrificial interlayer-based method for the preparation of silicon carbide membranes
A novel sacrificial interlayer-based method for the preparation of silicon carbide membranes
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DOI：
10.1016/j.memsci.2007.09.044
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发表时间：
2008-05-15
影响因子：
9.5
通讯作者：
Tsotsis, Theodore T.
中科院分区：
文献类型：
--
作者：
Elyassi, Bahman;Sahimi, Muhammad;Tsotsis, Theodore T.
提出了一种基于牺牲层的制备纳米多孔碳化硅膜的新方法。它包括在滑动铸造的管状碳化硅支撑件的顶部上的聚苯乙烯牺牲夹层和碳化硅预陶瓷层的周期性和交替涂层。用这种技术制备的膜表现出氦和氢相对于氩的单一气体理想分离因子分别在176-465和101-258的范围内，其渗透率通常比以前用更常规的技术制备的碳化硅膜的渗透率高2 - 3倍。相同的膜的混合气体实验表明分离因子高达117等摩尔的H-2/CH 4混合物。我们推测，改进的膜特性是由于牺牲夹层填充底层结构中的孔，并防止它们被陶瓷前聚合物堵塞。该方法具有良好的应用前景，可用于制备各种其他无机微孔膜。(C)2007 Elsevier B. V.保留所有权利。
A novel method is presented based on the use of sacrificial interlayers for the preparation of nanoporous silicon carbide membranes. It involves periodic and alternate coatings of polystyrene sacrificial interlayers and silicon carbide pre-ceramic layers on the top of slip-casted tubular silicon carbide supports. Membranes prepared by this technique exhibit single gas ideal separation factors of helium and hydrogen over argon in the ranges 176-465 and 101-258, respectively, with permeances that are typically two to three times higher than those of silicon carbide membranes prepared previously by the more conventional techniques. Mixed-gas experiments with the same membranes indicate separation factors as high as 117 for an equimolar H-2/CH4 mixture. We speculate that the improved membrane characteristics are due to the sacrificial interlayers filling the pores in the underlying structure and preventing their blockage by the pre-ceramic polymer. The new method has good promise for application to the preparation of a variety of other inorganic microporous membranes. (C) 2007 Elsevier B.V. All rights reserved.