Determination of ion fraction and energy analysis of sputtered particles from deuterium bombarded surfaces
Determination of ion fraction and energy analysis of sputtered particles from deuterium bombarded surfaces
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DOI：
10.1016/0022-3115(76)90352-4
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发表时间：
1976-12
影响因子：
3.1
通讯作者：
A. Krauss;D. Gruen
中科院分区：
文献类型：
--
作者：
A. Krauss;D. Gruen
在 1-40 keV 能量范围内的氘、氦和氩离子的各种背景气体存在下，测量了离子能量分布和溅射产率。氢化物形成金属（例如 Ti、Y 和 V）暴露于氢气中而发生的表面化学变化对溅射颗粒的电荷状态有显着影响。在等离子体装置和可能的反应器中可能普遍存在的条件下，离子/中性分数可能会急剧增加，钛达到约 41%。此前仅通过氧离子溅射观察到金属靶材的如此大的离子分数，这为改进等离子体设备中的杂质控制提供了可能性。气体吸附和反冲注入都涉及决定溅射产物离子分数的机制。
Ion energy distributions and sputtering yields have been measured in the presence of various background gases for deuterium, helium and argon ions in the 1–40 keV energy range. Alteration of the surface chemistry of hydride forming metals such as Ti, Y and V by exposure to hydrogen has a significant effect on the charge state of the sputtered particles. Under conditions likely to prevail in plasma devices and possible reactors, the ion/neutral fraction may be drastically increased, reaching ~41% for Ti. Such large ion fractions for metal targets have been previously observed only by sputtering with oxygen ions and present the possibility of improved impurity control in plasma devices. Both gas adsorption and recoil implantation are involved in the mechanism determining the ion fraction of sputtered products.