A novel K-band push-push oscillator using slot ring resonator embedding Gunn diodes
A novel K-band push-push oscillator using slot ring resonator embedding Gunn diodes
复制标题
采用嵌入耿氏二极管的槽环谐振器的新型K波段双推振荡器
DOI：
10.1109/eumc.2007.4405302
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
M. Aikawa
中科院分区：
文献类型：
--
作者：
K. Kawasaki;T. Tanaka;M. Aikawa
本文提出了一种新型的古恩二极管推挽振荡器。振荡器采用古恩二极管和槽环谐振器。成功地采用了双面电路技术。该振荡器由四个古恩二极管、一个槽环谐振器和微带线组成输出电路。古恩二极管设置在形成于电介质基板上的槽环谐振器上。微带线，输出电路形成在反面。该振荡器是在K波段设计和制作的。在19.2GHz处，所需二次谐波信号的输出功率为+3.16dBm。在1 MHz偏频下，相位噪声为-108.5 dBc/Hz。该振荡器结构简单，易于设计，并利用古恩二极管振荡器的优点，以低成本实现了低相位噪声性能。
In this paper, a novel Gunn diode push-push oscillator is proposed. Gunn diodes and a slot ring resonator are used for the oscillator. A double-sided circuit technology is adopted successfully. The oscillator consists of four Gunn diodes, a slot ring resonator and microstrip lines for the output circuit. The Gunn diodes are arranged on the slot ring resonator formed on a dielectric substrate. The microstrip lines, output circuit is formed on the reverse side. The oscillator is designed and fabricated in K-band. The measured output power of the desired second harmonic signal is +3.16 dBm at the frequency of 19.2 GHz. The measured phase noise is -108.5 dBc/Hz at 1 MHz offset frequency. The oscillator is designed easily due to the very simple structure and achieves low phase noise performance with low cost by using the advantages of Gunn diode oscillator.