Comparison of trimethylgallium and triethylgallium for the growth of GaN
Comparison of trimethylgallium and triethylgallium for the growth of GaN
复制标题
三甲基镓和三乙基镓生长 GaN 的比较
DOI：
10.1063/1.120310
复制
发表时间：
1997
影响因子：
4
通讯作者：
H. Vydyanath
中科院分区：
文献类型：
--
作者：
A. Saxler;D. Walker;P. Kung;Xiaolong Zhang;M. Razeghi;J. Solomon;W. Mitchel;H. Vydyanath
GaN films grown by low-pressure metalorganic chemical vapor deposition using trimethylgallium and triethylgallium as gallium precursors are compared. The films were characterized by x-ray diffraction, Hall effect, photoluminescence, secondary ion mass spectroscopy, and etch pit density measurements. GaN layers grown using triethylgallium exhibited superior electrical and optical properties and a lower carbon impurity concentration.
