Germanium aluminum nitride thin films for piezo-MEMS devices
Germanium aluminum nitride thin films for piezo-MEMS devices
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用于压电 MEMS 器件的氮化铝锗薄膜
DOI：
10.1109/transducers.2017.7994440
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
M. Kobayashi
中科院分区：
文献类型：
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作者：
T. Mizuno;K. Umeda;Y. Aida;A. Honda;M. Akiyama;T. Nagase;M. Kobayashi
本文报道了掺杂AlN薄膜的压电极性反转。采用射频磁控溅射法制备了掺锗氮化铝（GeAlN）薄膜。掺杂量从0到23%变化。在Ge含量为3%时，观察到从Al极性到N极性的最大压电极性反转，此时压电d33值从+7.8 pC/N变化到-7.7 pC/N。研究了具有N极性层和Al极性层的体声波谐振器。B AW谐振器在2.58 GHz下以二阶泛音模式激励。最后，讨论了GeAlN极性反转的机理，并给出了GeAlN体系的第一性原理计算。
This paper reports on piezoelectric polarity inversion of AlN thin films by doping. The germanium doped aluminum nitride (GeAlN) thin films are grown by RF magnetron sputtering. Doping amount is varied from 0 to 23%. The maximum piezoelectric polarity inversion from Al polarity to N polarity is observed at 3% of Ge where the piezoelectric d33 value changes from + 7.8 to −7.7 pC/N. The bulk acoustic wave (BAW) resonator with the stack of both N polarity and Al polarity layers is demonstrated. The B AW resonator is excited at 2nd overtone mode at 2.58 GHz. Finally, the mechanism of polarity inversion of GeAlN is discussed and first-principal calculations of GeAlN system are presented.