CHARACTERIZATION OF THE OXIDATION OF TANTALUM NITRIDE
CHARACTERIZATION OF THE OXIDATION OF TANTALUM NITRIDE
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DOI：
10.1002/sia.740200703
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发表时间：
1993-06-01
影响因子：
1.7
通讯作者：
TAYLOR, JA
中科院分区：
文献类型：
--
作者：
IBIDUNNI, AO;MASAITIS, RL;TAYLOR, JA
溅射沉积的非化学计量比氮化钽薄膜由于其稳定性和可加工性而用于激光修整的薄膜电阻器。通过在空气中加热以形成钝化Ta 2 O 5膜来稳定膜。如果电阻器暴露在腐蚀性的热或化学条件下，这种钝化膜可能会被破坏。因此，我们已经研究了溅射TaN薄膜和电阻器沉积在SiO2和Al 2 O3衬底上，并暴露于KOH溶液或空气在250-500 ℃的不同时间。利用俄歇电子能谱（AES）、X射线光电子能谱（XPS）、X射线吸收近边谱（XANES）和扩展X射线吸收精细结构（EXAFS）对氧化膜进行了表征。诺奥俄歇光谱中的化学位移已被用来表明，沉积的TaN的初始部分与SiO2表面反应，形成Ta 2 O 5。X射线光电子能谱表明，虽然显着量的氧可以存在于溅射膜中，很少的钽被完全氧化为Ta 2 O 5。X射线光电子能谱也被用来表明，氧化层的厚度缓慢增加时，在空气中加热。最后，KTaO 3被确定通过XANES暴露于KOH的薄膜表面上。一旦钝化的Ta 2 O 5转化为KTaO 3，下面的膜就会发生进一步的氧化。这些薄膜的氧化机制和每一个光谱技术的独特优势进行了讨论。
Sputter-deposited non-stoichiometric tantalum nitride films are used for laser-trimmed thin-film resistors owing to their stability and processability. The films are stabilized by heating in air to form a passive Ta2O5 film. This passive film can be destroyed if the resistors are exposed to aggressive thermal or chemical conditions. Thus we have studied sputtered TaN films and resistors deposited on SiO2 and Al2O3 substrates and exposed to either KOH solutions or air at 250-500-degrees-C for various times. The oxidized films have been characterized with Auger electron spectroscopy (AES), x-ray photelectron spectroscopy (XPS), x-ray absorption near-edge spectroscopy (XANES) and extended x-ray absorption fine structure (EXAFS). Chemical shifts in the NOO Auger spectrum have been used to show that the initial fraction of deposited TaN reacts with the SiO2 surface to form Ta2O5. X-ray photoelectron spectroscopy showed that although significant amounts of oxygen can be present in the sputtered films, little of the tantalum is fully oxidized to Ta2O5. X-ray photoelectron spectroscopy was also used to show that the oxide layer slowly increases in thickness when heated in air. Finally, KTaO3 was identified by XANES on the surface of films exposed to KOH. Once the passive Ta2O5 is converted to KTaO3, further oxidation of the underlying films occurs. The mechanism of oxidation of these films and the unique advantages of each spectroscopic technique are discussed.