Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer
Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer
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DOI：
10.1063/1.3408899
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发表时间：
2010-06-01
影响因子：
3.2
通讯作者：
Ramanathan, Shriram
中科院分区：
文献类型：
--
作者：
Ruzmetov, Dmitry;Gopalakrishnan, Gokul;Ramanathan, Shriram
氧化物半导体中金属-绝缘体转变（MIT）的静电控制可能会影响新兴的氧化物电子学领域。二氧化钒（VO 2）是特别感兴趣的，因为MIT发生在室温附近的事实，它被认为表现出莫特转变。我们提出了一个详细的帐户，我们的实验研究三端场效应晶体管的器件使用薄膜VO 2作为沟道层。栅极通过绝缘栅极氧化层与沟道分离，从而能够真正探测场效应，而直接从电极流出的大漏电流的干扰最小或没有干扰。讨论了器件多个组件的制造（包括栅极氧化物沉积）对VO 2薄膜特性的影响。进一步讨论了栅压对器件响应的影响，指出了一些不寻常的特性，包括时间依赖性。一个可逆的单极调制后的栅极电压的沟道电阻首次在优化设计的设备。在这项工作中提出的结果是相关的解释栅极电压响应在这样的氧化物，以及解决在推进氧化物半导体的栅极叠层处理的挑战。(C)2010年美国物理学会。[doi：10.1063/1.3408899]
Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide (VO2) is of particular interest due to the fact that the MIT happens in the vicinity of room temperature and it is considered to exhibit the Mott transition. We present a detailed account of our experimental investigation into three-terminal field effect transistor-like devices using thin film VO2 as the channel layer. The gate is separated from the channel through an insulating gate oxide layer, enabling true probing of the field effect with minimal or no interference from large leakage currents flowing directly from the electrode. The influence of the fabrication of multiple components of the device, including the gate oxide deposition, on the VO2 film characteristics is discussed. Further, we discuss the effect of the gate voltage on the device response, point out some of the unusual characteristics including temporal dependence. A reversible unipolar modulation of the channel resistance upon the gate voltage is demonstrated for the first time in optimally engineered devices. The results presented in this work are of relevance toward interpreting gate voltage response in such oxides as well as addressing challenges in advancing gate stack processing for oxide semiconductors. (C) 2010 American Institute of Physics. [doi:10.1063/1.3408899]