Miniaturized Multilayer Inductors on GaAs Three-dimensional MMIC
Miniaturized Multilayer Inductors on GaAs Three-dimensional MMIC
复制标题
GaAs 三维 MMIC 上的小型化多层电感器
DOI:
--
复制
发表时间:
2007
期刊:
影响因子:
--
通讯作者:
K. Uehara
中科院分区:
文献类型:
--
作者:
T. Kaho;M. Sasaki;Y. Yamaguchi;K. Nishikawa;K. Uehara
Newly developed multi-layer inductors on GaAs three-dimensional MMICs are presented. We tested single-, double-, triple-, and quadruple-layer stacked-type inductors in what may be the first report on inductors on a GaAs MMIC with three or more layers. These proposed multilayer inductors can produce higher inductance in the same area as conventional 2D-MMICs. The performance of the single-and multilayer inductors was measured on wafer and calculated by electromagnetic field analysis using the finite element method. Though they are the same size, the multilayer inductors produce 2~11 times higher inductance than the single-layer inductors. In addition, the degradation of the multilayer inductor performances, such as resistance, Q-factor and self-resonant frequency, was not seen compared with the single-layer inductors. Multilayer inductors make it possible to shrink circuit size from many hundreds of MHz to the millimetre wave.