Control of N content of GaPN grown by molecular beam epitaxy and growth of GaPN lattice matched to Si(100) substrate
Control of N content of GaPN grown by molecular beam epitaxy and growth of GaPN lattice matched to Si(100) substrate
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DOI：
10.1143/jjap.41.528
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发表时间：
2002-02-01
期刊：
影响因子：
--
通讯作者：
Aiki, K
中科院分区：
文献类型：
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作者：
Furukawa, Y;Yonezu, H;Aiki, K
研究了在不同生长条件下，用射频分子束外延法在GaP（100）衬底上生长的GaPN外延层的N含量。结果表明，随着生长温度的降低和氮等离子体源射频功率的增加，GaPN的N含量增加。通过控制生长温度和射频功率来控制N的含量，在Si（100）衬底上生长了GaPN外延层，并在Si衬底上添加了一层薄的GaP缓冲层。通过截面透射电子显微镜对外延层进行了研究，很明显，在GaPN外延层中没有产生失配位错和穿透位错。结果表明，在Si（100）衬底上，用薄的Ga-P缓冲层可以生长出晶格匹配、无缺陷的GaPN外延层。我们还讨论了N掺入对位错产生的影响。
We investigate the N content of a GaPN epilayer grown on GaP(100) by radio-frequency molecular beam epitaxy under various growth conditions. It is found that the N content of GaPN increases with decreasing growth temperature and with increasing rf power of the nitrogen plasma source. The N content was controlled by means of the growth temperature and rf power, and the GaPN epilayer was grown on a Si(100) substrate with a thin GaP buffer layer. The epilayer is investigated by cross-sectional transmission electron microscopy and it is clear that misfit dislocations and threading dislocations are not generated in the GaPN epilayer. As a result, it is demonstrated that lattice-matched and defect-free GaPN epilayers can be grown on Si(100) with a thin Ga-P buffer layer. We also discuss the effect of N incorporation on the generation of dislocations.