Hot wire chemical vapor deposition of germanium selenide thin films for nonvolatile random access memory applications
Hot wire chemical vapor deposition of germanium selenide thin films for nonvolatile random access memory applications
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用于非易失性随机存取存储器应用的硒化锗薄膜的热丝化学气相沉积
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发表时间：
2011
期刊：
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通讯作者：
E. Burte
中科院分区：
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作者：
Denis Reso;M. Silinskas;M. Lisker;A. Schubert;E. Burte
采用热丝金属有机气相沉积方法，以四烯基锗和二叔丁基硒化物为原料，在不同的衬底上沉积了硒化锗（GexSe100−x, 0<x<57）薄膜。研究了沉积过程的生长动力学和薄膜的性能。生长速率随温度和压力的升高而降低。证明了保形阶跃覆盖。硒化锗薄膜被银覆盖并随后扩散，用作可编程金属化电池，以验证电开关性能。
Thin films of germanium selenide (GexSe100−x with 0<x<57) were deposited on different substrates by hot wire metalorganic chemical vapor deposition using tetraallylgermanium and di-tert-butylselenide. The growth kinetics of the deposition process as well as the properties of the films were investigated. The growth rate was found to decrease with increasing temperature and decreasing pressure. The conformal step coverage was demonstrated. Germanium selenide films covered and subsequently diffused by silver were used as programmable metallization cells for a verification of the electrical switching properties.