Junction properties of homoepitaxial diamond films grown by step–flow mode
Junction properties of homoepitaxial diamond films grown by step–flow mode
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阶跃流模式生长的同质外延金刚石薄膜的结特性
DOI：
10.1063/1.368922
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发表时间：
1998
影响因子：
3.2
通讯作者：
K. Kajimura
中科院分区：
文献类型：
--
作者：
S. Yamanaka;H. Watanabe;S. Masai;S. Kawata;K. Hayashi;D. Takeuchi;H. Okushi;K. Kajimura
在小于0.1％的CH4/H2的情况下，具有原子表面的同质钻石膜可重复生长。已成功制作。电流 - 电压（I – V）特性分别约为1.1和1.5–1.6 eV，但在0.1％的CH4/H2的状态下，许多不发育的结晶石（UC）和pyramidal hillocks（pH）通常形成薄膜的表面甚至主要是通过台阶模式生长的。通过将直线推送到v = 0的LN I对V的v = 0获得，与V与Schottky屏障相关。
Homoepitaxial diamond films with atomically flat surface were reproducibly grown by step–flow mode under the condition of less than 0.1% CH4/H2. Using these diamond films, high-quality Schottky junctions between Al and high-conductivity layer near the surface of the films have been successfully made. At 400 K, the ideality factor and the barrier height of the Schottky junctions, which are defined by the conventional junction theory, estimated from the current–voltage (I–V) characteristics are about 1.1 and 1.5–1.6 eV, respectively. Under the condition of more than 0.1% CH4/H2, however, many unepitaxial crystallites (UC) and pyramidal hillocks (PH) are often formed on the surface of the films which are even mainly grown by the step–flow mode. The Schottky junction properties become worse with an increase in the density of UC and PH. In particular, the increase in the saturation current, which was obtained by extrapolating the straight line to V=0 in a plot of ln I against V, correlated with Schottky barrie...
钻石“非”和“或非”逻辑电路
DOI：
--
发表时间：
2017
期刊：
影响因子：
--
作者：
J. W. Liu;M. Y. Liao;M. Imura;and Y. Koide,
通讯作者：
and Y. Koide,