Influence of the annealing temperature of the Bi4Ti3O12 seeding layer on the structural and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films
Influence of the annealing temperature of the Bi4Ti3O12 seeding layer on the structural and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films
复制标题
Bi4Ti3O12籽晶层退火温度对Bi3.15Nd0.85Ti2.99Mn0.01O12薄膜结构和电学性能的影响
作者：
W. L. Zhang;M. H. Tang;Y. Xiong;K. Wang;Z. P. Wang;Y. G. Xiao;S. A. Yan;Z. Li;J. He
采用溶胶-凝胶法在Pt（111）/Ti/SiO2/Si（100）衬底上制备了具有（117）择优取向的Bi3.15Nd0.85Ti2.99Mn0.01O12（BNTM）薄膜。研究了Bi_4Ti_3O_（12）（BTO）籽晶层在550 ~ 700 ℃范围内不同退火温度下对BNTM结构和电学性能的影响。X射线衍射结果表明，在600 ℃退火处理的BTO层BNTM薄膜具有最高的（117）取向度，为97.33%。与没有晶种层或具有在不同温度下处理的BTO层的BNTM薄膜相比，该典型的BNTM膜还具有最大的反射极化（2 Pr/4 114.5mC cm 2）、介电常数（3r/4 614.9）和介电可调谐性（16.9%）。研究还发现，在这些典型的BNTM薄膜中实现了压电性能的显着增强。此外，BNTM薄膜与BTO晶种层表现出更好的疲劳性能，降低了1.1%，109脉冲循环后相比，30.2%的那些没有晶种层。讨论了BTO籽晶层温度对BNTM性能的影响机理。
Highly (117)-preferred Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM) thin films with a Bi4Ti3O12 (BTO) seeding layer were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by using a sol–gel method. The effects of the Bi4Ti3O12 (BTO) seeding layer under different annealing temperatures ranging from 550 to 700 C on the structural and electrical properties of BNTM were investigated. X-ray diffraction results indicated that the BNTM thin films with a BTO layer processed with the annealing temperature of 600 C exhibited the.highest (117) orientation at a degree of 97.33%. This typical BNTM film also had the largest remanent polarization (2Pr ¼ 114.5 mC cm2), dielectric constant (3r ¼ 614.9) and dielectric tunability (16.9%) as compared to the BNTM thin films without a seeding layer or with the BTO layer processed at a different temperature. It is also found that the significant enhancement of the piezoelectric properties was achieved in these typical BNTM thin films. Additionally, the BNTM thin films with BTO seeding layer displayed better fatigue properties, degraded by only 1.1% after 109 pulse cycles as compared to 30.2% for those without seeding layers. The mechanism of the temperature dependence of BTO seeding layer on the properties of BNTM will be discussed.