High-power room-temperature continuous wave operation of type-I In(Al)GaAsSb/GaSb diode lasers at wavelengths greater than 2.5 μm
High-power room-temperature continuous wave operation of type-I In(Al)GaAsSb/GaSb diode lasers at wavelengths greater than 2.5 μm
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I 型 In(Al)GaAsSb/GaSb 二极管激光器在波长大于 2.5 μm 时高功率室温连续波运行
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
G. Belenky
中科院分区：
文献类型：
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作者：
Jongjin Kim;L. Shterengas;R. Martinelli;G. Belenky
我们在(Al)GaAsSb/GaSb双量子阱半导体激光器中制备了2.7和2.8μm波长的半导体激光器，并对其特性进行了研究。该材料是用分子束外延生长的。所有激光器的腔长均为2毫米，孔径均为100μm。在16°C下，2.7-μm激光器获得了高达500 mW的连续波运转，而2.8-μm激光器获得了160 mW的连续波运转。在外量子效率为0.26光子/电子的2.7-μm激光器上，获得了低至350A/cm~2的阈值电流密度。当电流为2.4A时，最大壁塞效率为9.2%。在脉冲电流模式下，在20℃、2.7μm和2.8μm时，分别获得了2.5W和2W的峰值功率。利用2.7-μm器件测量了T0=71K和T1=86K的特征温度。对于2.8-μm激光器，t0=59K，t1=72K。器件的微分串联电阻约为0.18Ω，热阻估计约为5K/W。对激光器的增益、损耗、阈值电流、器件效率和自发辐射的测量表明，限制(Al)GaAsSb/GaSb激光器高功率工作波长到3μm以上的设计方法是量子阱中的空穴泄漏，而不是俄歇复合。
We have fabricated and characterized 2.7- and 2.8-μm wavelength In(Al)GaAsSb/GaSb two-quantum-well diode lasers. The material was grown using molecular-beam epitaxy. All lasers have 2-mm cavity lengths and 100 μm apertures. Continuous wave operation up to 500 mW was recorded at 16 °C from 2.7-μm lasers, while 160 mW was obtained from 2.8-μm lasers. Threshold current densities as low as 350 A/cm2 were recorded from 2.7-μm lasers with external quantum efficiencies of 0.26 photon/electrons. The maximum wall-plug efficiency was 9.2 % at a current of 2.4 A. A peak power of 2.5 W was recorded in the pulsed-current mode operation at 20 °C at 2.7 μm and 2 W at 2.8 μm. Characteristic temperatures of T0 = 71 K and T1 = 86 K were measured from the 2.7-μm devices. T0 = 59 K and T1 = 72 K for the 2.8-μm lasers. The devices have differential series resistances of about 0.18 Ω with estimated thermal resistances of about 5 K/W. Measurements of gain, losses, threshold current, device efficiency and spontaneous emission of the lasers show that it is the hole leakage from QWs into the waveguide, and not Auger recombination that limits CW room temperature output power of long wavelength GaSb-based type-I QW lasers at least up to wavelengths of 2.8 μm. A design approach to extend the operating wavelength of high power In(Al)GaAsSb/GaSb lasers to more than 3 μm is discussed.