Effect of Nb doping on structural and electrical properties of homoepitaxial rutile TiO2:Nb films
Effect of Nb doping on structural and electrical properties of homoepitaxial rutile TiO2:Nb films
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Nb掺杂对同质外延金红石TiO2:Nb薄膜结构和电学性能的影响
DOI：
10.1016/j.ceramint.2017.10.214
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发表时间：
2018
影响因子：
5.2
通讯作者：
Ma Jin
中科院分区：
文献类型：
--
作者：
Wang Weiguang;Feng Xianjin;Luan Caina;Ma Jin
采用金属有机化学气相沉积（MOCVD）方法在金红石型TiO2（r-TiO2）（001）衬底上制备了Nb掺杂TiO2（TiO2：Nb）单晶薄膜。研究了Nb掺杂对薄膜结构和电学性能的影响。薄膜的最大霍尔迁移率高达14.0 cm 2 V − 1s − 1，最低电阻率为1.9 × 10 − 1 Ω cm，比纯r-TiO 2低7个数量级。所获得的薄膜是沿（001）取向沿着外延生长的单晶r-TiO 2。讨论了结构与电性能之间的关系。具有高迁移率的TiO2：Nb薄膜在透明电子器件领域有着广泛的应用前景。
Single crystalline homoepitaxial Nb doped TiO2(TiO2:Nb) films were deposited on rutile TiO2(r-TiO2) (001) substrates by metal organic chemical vapor deposition (MOCVD). Effect of Nb doping on structural and electrical properties of the films were studied. The maximum Hall mobility of the obtained films reached as high as 14.0 cm2V−1s−1and the lowest resistivity of the films was 1.9 × 10−1Ω cm which was 7 orders of magnitude lower than that of pristine r-TiO2. The obtained films were single crystalline r-TiO2epitaxially grown along the (001) orientation. The relationship between the structural and electrical properties was discussed. TiO2:Nb films with high mobilities may have many potential applications in the field of transparent electronic devices.