High Q multilayer spiral inductor on silicon chip for 5/spl sim/6 GHz
High Q multilayer spiral inductor on silicon chip for 5/spl sim/6 GHz
复制标题
硅芯片上高 Q 值多层螺旋电感器，适用于 5/spl sim/6 GHz
DOI：
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发表时间：
2002
影响因子：
4.9
通讯作者：
Zhang Yi
中科院分区：
文献类型：
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作者：
Guo Lihui;Yu Mingbin;Chen Zhen;He Han;Zhang Yi
采用多层螺旋(MLS)结构在高损耗硅衬底上实现了频率在5/SPL sim/6 GHz附近的高Q值螺旋电感。与单层螺旋(OLS)电感相比，4-NH电感在5.65 GHz处的Q值提高了约80%。分析了结构对Q值和谐振频率的影响，指出在设计电感时应考虑MLS电感的最佳通孔高度。该制造工艺与Cu/SiO/Sub2/互连工艺兼容。
High Q-values of spiral inductors at frequency around 5/spl sim/6 GHz have been achieved with a multilayer spiral (MLS) structure on a high loss silicon substrate. Compared to a one-layer spiral (OLS) inductor, the Q-value of a 4-nH inductor has been improved by about 80% at 5.65 GHz. The impact of the structure on Q-value and resonant frequency has been analyzed, which shows that an optimal height for the via of MLS inductors should be considered when inductors are designed. The fabrication process is compatible with Cu/SiO/sub 2/ interconnect technology.