Density of states for dilute nitride systems: calculation of lifetime broadening
Density of states for dilute nitride systems: calculation of lifetime broadening
复制标题
稀氮化物系统的态密度：寿命展宽的计算
DOI：
10.1088/0953-8984/21/25/255801
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
J. Rorison
中科院分区：
文献类型：
--
作者：
N. Vogiatzis;J. Rorison
我们提出了体和限制量子阱和量子线GaInNAs结构的能带结构的计算。为了处理这种非随机合金材料系统，我们遵循以前的方法，使用安德森杂质模型，其中氮局域态与GaInAs导带态相互作用。我们解决这个模型使用松原绿色的功能和相关的自能产生一个复杂的能带结构，其中的真实的和虚部依赖于氮的浓度。特别是这种方法给出了一个明确的氮依赖寿命加宽，是不同于以前的工作，没有人工输入参数。导带的态密度，来自这些功能，强烈改变与氮的相互作用状态。需要进一步的光学和运输调查，涉及该系统的态密度。
We present calculations for the band structure of bulk and confined quantum well and quantum wire GaInNAs structures. To treat this non-randomly alloyed material system we follow previous approaches in using an Anderson impurity model where the nitrogen localized states interact with the GaInAs conduction band states. We solve this model using Matsubara Green’s functions and the associated self-energies which produce a complex band structure where both the real and imaginary components depend on the concentration of nitrogen. In particular this approach gives a definite nitrogen dependent lifetime broadening and is different from previous work in that no artificial input parameters are used. The density of states of the conduction band, derived from these functions, is strongly altered by interaction with the nitrogen states. The density of states is required for further optical and transport investigations involving this system.