The origin of stress reduction by low-temperature AlN interlayers
The origin of stress reduction by low-temperature AlN interlayers
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DOI：
10.1063/1.1512331
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发表时间：
2002-10-07
影响因子：
4
通讯作者：
Krost, A
中科院分区：
文献类型：
--
作者：
Bläsing, J;Reiher, A;Krost, A
薄的低温AlN中间层可以用于减小应力，以在蓝宝石上的GaN缓冲层上生长厚的无裂纹AlGaN层，并且在Si上生长厚的无裂纹GaN层。通过高分辨X射线衍射测量不同层间沉积温度下Si（111）衬底上金属有机化学气相外延生长的样品，研究了应力降低的机理。随着层间生长温度的降低，拉伸应力降低。从倒易空间图，我们得出结论，在高温下生长的夹层是假晶的，而在较低的温度下生长，他们放松。因此，在低温AlN夹层上生长的AlGaN或GaN层在压缩夹层诱导应变下生长。GaN层中的应力取决于可能控制AlN层间弛豫量的生长温度。(C)2002年美国物理学会。
Thin low-temperature AlN interlayers can be applied to reduce stress to grow thick crack-free AlGaN layers on GaN buffer layers on sapphire and thick crack-free GaN layers on Si. The mechanism leading to stress reduction is investigated by high resolution x-ray diffractometry measurements on metalorganic chemical vapor phase epitaxy grown samples on Si(111) with different interlayer deposition temperatures. A decrease of tensile stress with decreasing interlayer growth temperature is observed. From reciprocal space maps we conclude that interlayers grown at high temperatures are pseudomorphic, while grown at lower temperatures they are relaxed. Therefore, AlGaN or GaN layers grown on a low temperature AlN interlayer grow under compressive interlayer-induced strain. The stress in the GaN layer depends on the growth temperature that likely controls the amount of AlN interlayer relaxation. (C) 2002 American Institute of Physics.