Effects of Gas Flow on Particle Growth in Silane RF Discharges
Effects of Gas Flow on Particle Growth in Silane RF Discharges
复制标题
气流对硅烷射频放电中颗粒生长的影响
DOI：
10.1143/jjap.38.4556
复制
发表时间：
1999
影响因子：
1.5
通讯作者：
K. Kim
中科院分区：
文献类型：
--
作者：
Yasuhiro Matsuoka;M. Shiratani;T. Fukuzawa;Yukio Watanabe;K. Kim
采用原位二维偏振激光散射方法研究了在等离子体化学气相沉积（PCVD）反应器中，采用环形电极的硅烷射频放电中气流对颗粒生长的影响。粒子的生长取决于短寿命自由基的产生和中性团簇的损失在自由基产生区域周围的等离子体/鞘层边界附近的供电电极。速度高于约6cm/s的气流在抑制颗粒生长方面是有效的，因为中性团簇的损失增加。此外，发现流动到接地电极附近的等离子体/鞘层边界的尺寸大于120 nm的颗粒穿过鞘层。这意味着，这种颗粒可能存款的膜表面的PCVD反应器与陶瓷型供电电极。
The effects of gas flow on particle growth in silane RF discharges in a plasma chemical vapor deposition (PCVD) reactor with a shower-type powered electrode are studied using an in situ two-dimensional polarization-sensitive laser-light-scattering method. Particle growth depends on both the production of short-lifetime radicals and the loss of neutral clusters in the radical production region around the plasma/sheath boundary near the powered electrode. Gas flow of a velocity above about 6 cm/s is effective in suppressing particle growth because of increase in loss of neutral clusters. Moreover, particles larger than 120 nm in size that flow to the plasma/sheath boundary near the grounded electrode are found to pass through the sheath. This implies that such particles may deposit on film surfaces for PCVD reactors with the shower-type powered electrode.