Fatigue suppression of ferroelectric Pb1−xBax(Zr0.52Ti0.48)O3 thin films prepared by sol-gel method
Fatigue suppression of ferroelectric Pb1−xBax(Zr0.52Ti0.48)O3 thin films prepared by sol-gel method
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DOI：
10.1063/1.2429725
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发表时间：
2007-02
影响因子：
3.2
通讯作者：
Y. Wang;K. F. Wang;Congshan Zhu;T. Wei;J. Zhu;Junkai Liu
中科院分区：
文献类型：
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作者：
Y. Wang;K. F. Wang;Congshan Zhu;T. Wei;J. Zhu;Junkai Liu
研究了用溶胶-凝胶法在镀铂硅片上制备的Pb 1-xBax（Zr0.52Ti0.48）O3（PBZT）铁电薄膜的极化疲劳行为。在室温下观察到，在Ba掺杂后，PBZT（x=0.1）薄膜的疲劳耐久性显著增强，并且在高达1010次开关循环时几乎无疲劳性能。结果表明，Ba掺杂到x=0.1导致薄膜中的氧空位减少70%。氧离子稳定性的提高和氧空位的抑制是疲劳寿命提高的主要原因。
The polarization fatigue behavior of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 (PBZT) thin films deposited on Pt-coated silicon wafers by sol-gel method is investigated. The fatigue endurance is significantly enhanced upon Ba doping and almost fatigue-free performance up to 1010 switching cycles for PBZT (x=0.1) thin films are observed at room temperature. It is revealed that Ba doping up to x=0.1 results in a 70% decrease of oxygen vacancies in the films. The improved fatigue endurance is attributed to the enhanced oxygen ion stability and suppressed oxygen vacancies.